Nonlinear modeling of waveguide photodetectors
نویسندگان
چکیده
منابع مشابه
Physics of Waveguide Photodetectors with Integrated Amplification
The promising concept of waveguide photodetection with integrated amplification is evaluated by self-consistent device simulation. Such integrated amplification detectors have the potential to achieve simultaneously high saturation power, high speed, high responsivity, and quantum efficiencies well above one. Our example design vertically combines a bulk photodetector ridge region with laterall...
متن کاملModeling of High Temperature GaN Quantum Dot Infrared Photodetectors
In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...
متن کاملSi⁺-implanted Si-wire waveguide photodetectors for the mid-infrared.
CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantat...
متن کاملEpitaxial III-V-on-silicon waveguide butt-coupled photodetectors.
We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17 ...
متن کاملNonlinear infrared plasmonic waveguide arrays
The large negative permittivity of noble metals in the infrared region prevents the possibility of highly confined plasmons in simple waveguide structures such as thin films or rods. This is a critical obstacle to applications of nonlinear plasmonics in the telecommunication wavelength region. We theoretically propose and numerically demonstrate that such limitation can be overcome by exploitin...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2013
ISSN: 1094-4087
DOI: 10.1364/oe.21.015634